Rohde & Schwarz and PE Systems present a complete, fully automated testing solution for silicon, silicon carbide (SiC) and gallium nitride (GaN) power devices. Combining automated double pulse testing, PCB based test fixtures and low drift isolated probes, the system delivers fast, repeatable characterization from initial qualification through in situ production measurements. The software handles skew correction and automatically extracts key metrics including switching energy, switching time and parasitic inductance, and generates customizable measurement reports to reduce manual effort, accelerate development and increase ROI. Contact your local Rohde & Schwarz sales team or visit the product page to request a demo and datasheets.
What you´ll learn:
- Why automated data acquisition matters for modern power‑device development
- Supported device classes: silicon, SiC and GaN
- Key hardware features: low noise, low heat and low‑drift isolated probes
- Fast, flexible setup: PCB‑based fixtures and interchangeable probes - DUT swap in ~10-15 minutes
- End‑to‑end automation: measurement, skew correction, automated extraction of switching energy/times and parasitic inductance, and customizable reports
- Two configurations: compact Lab Bench for R&D vs. full Plus Test system for complex/production workflows
