Accurate double pulse testing with the R&S®RT-ZISO isolated probing system
The double pulse testing (DPT) is crucial to evaluating the switching behavior for metal oxide semiconductor field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT) and wide bandgap (WBG) power semiconductor devices. The slew rate of switching devices is increasing, especially on high-side power transistor where referencing switch nodes creates a fast common-mode environment. Conventional highvoltage differential probes have difficulties obtaining a good measurement with their limited common-mode rejection ratio at higher frequencies.