Characterizing parasitic components in power converters

Fundamentals and measurement

LCX200 LCR meter

The increased utilization of wide bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) in power converters has allowed for highly power-dense supplies that operate with low switching losses and a higher efficiency. However, the benefits of these fast switching transistors used within power converters can be limited if the effects of parasitics appearing at high frequencies are not considered.

The White paper offers an introduction to parasitics as well as a description of parasitics within passive components such as capacitors, inductors and resistors. Finally, we describe the basic operation of an LCR meter and showcase a demonstration of how to use the R&S®LCX200 LCR meter.